Samsung has successfully completed grade NAND Flash memory chip 20nm. The company claims this card having a larger memory and faster than previous generations of similar cards.
20nm MLC NAND card (multi-level cell) has a productivity level 50 percent higher than the 30nm-class, and its performance when the 'write' 30nm NAND also exceeded 30 percent.
In addition, according to Samsung, 20nm NAND NAND also have high reliability, equivalent to 30nm NAND. This card is believed to raise the standard of performance on smartphones and high-density IT applications.
"In just one year after the launch Samsung's 30nm NAND production has been providing next generation 20nm NAND node, which exceeds the needs of customers the highest performance," explained Mr-Soo Cho, president, Memory Division, Samsung Electronics, as quoted Softepedia, Monday ( 19/4/2010).
"The new 20nm NAND is not only a significant step forward in the design process, but we have the advanced technology incorporated into it to activate a substantial innovation performance," he added.Samsung will sell a card that has a storage capacity ranging between 4GB and 64GB, while the speed will be 10Mbps 20MBps when reading and when writing.
0 komentar:
Post a Comment