Newer Magnetoresistive RAM (MRAM) many times faster than RAM

If you always desired for a fast computer, an ordinary RAM may just not be a solution. German physicists and engineers have thus developed the Magnetoresistive Random Access Memory (MRAM), which is not only faster but also more energy efficient. MRAM seems like it will boost the mobile computing industry and stores the level of charge by changing the north-south direction of a magnet’s field. IBM and other manufacturers are planning to use MRAM, which could spin electrons to flip the magnetic fields, which is also known as the spin-torque MRAM, something that the German physicists have further improvised and built the fastest so far.

By building tiny pillars of 165 nanometres, which act, as variable magnets at the top end, allow current to pass through from bottom to top and the spin of the electrons take place. The fields are flipped and it takes a while for it to settle to it’s new orientation. Then, the north and south axis draw circles in the air before finally settling which causes a wobble. Since this depends on the magnetic field and the wobble that takes place in a field, the German team developed a way to observe and control a magnetic field’s wobble during and after the flip. Right now, the MRAM is about 10 times faster than a MRAM, which needs 10 nanoseconds, and the conventional RAM needs 30 nanoseconds. This speed will definitely increase in the months and years to come.
source:gizmowatch